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DUAL Chamber Plasma assisted MBE System for Engg Graphene Boron Nitride Low Dimensional Structures (ITT/515).

The DUAL chamber molecular beam epitaxy (MBE) system will be used for the growth of high-quality, large-area epitaxial layers and heterostructures composed of graphene, boron nitride and related compounds for Nottinghams Graphene-Boron Nitride program. This equipment will be used to identify and optimise the conditions for growth of single atomic layers, followed by the programmed growth and processing of heterostructures in which single or multiple layers of graphene and boron nitride are grown sequentially to provide architectures by which new types of band-structure engineered functional devices can be realised. These engineered graphene/boron nitride heterostructures are required to support the fabrication of a new class of multilayer electronic devices. The University of Nottingham require a new MBE growth system that will be used exclusively for Graphene-Boron Nitride project.
CPV-Code: 39341000
Abgabefrist: 27.06.2013
Typ: Contract notice
Status: Submission for all lots
Aufgabe: Education
Vergabestelle:
name: https://www.in-tendhost.com/universityofnottingham/
address: Kings Meadow Campus Lenton Lane
postal_code: NG7 2NR
city: Nottingham - UK
country: UK
email: None
phone: None
contact_point: https://www.in-tendhost.com/universityofnottingham/
idate: 13. Juni 2020 03:42
udate: 13. Juni 2020 03:42
doc: 160212_2013.xml
authority_types: BODY_PUBLIC
activities: EDUCATION
Quelle: http://ted.europa.eu/udl?uri=TED:NOTICE:160212-2013:TEXT:EN:HTML
Unterlagen: None
Zuschlagskriterium: The most economic tender
Vertrag: Supply contract
Prozedur: Open procedure
Nuts: UKF14
Veröffentlichung: 16.05.2013
Erfüllungsort: Nottingham - UK
Link:
Lose:
Name Los Nr 1 UK__Nottingham__Gasdruckausrüstung
Gewinner None
Datum
Wert None
Anzahl Angebote None

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